j.e.iis.u ^e.ml-l.onaucko'i , o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. irf630,631 D84DN2,m2 9.0 amperes 200,150 volts "ds(on) = 0.4 n telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 [rut field effect power transistor features ? polysilicon gate ? improved stability and reliability ? no secondary breakdown ? excellent ruggedness ? ultra-fast switching ? independent of temperature ? voltage controlled ? high transconductance ? low input capacitance ? reduced drive requirement ? excellent thermal stability ? ease of paralleling n-channel case style to-220ab dimensions are in inches and (millimeters) case temperature reference point .14613.681 .14113.581 unit power mosfet tvpe t0220ab term \e term.2 3rain term.3 source tab drain maximum ratings (~!"c = 25 c) (unless otherwise specified) rating drain-source voltage drain-gate voltage, rqs = 1mh continuous drain current @ tq = 25 c @tc=100c pulsed drain current01 gate-source voltage total power dissipation @ tc = 25 c derate above 25 c operating and storage junction temperature range symbol vdss vdgr id 'dm vgs pd tj, tstg irf630/D84DN2 200 200 9.0 6.0 36 20 75 0.6 -55 to 150 irf631/d84dm2 150 150 9.0 6.0 36 20 75 0.6 -55 to 150 units volts volts a a a volts watts w/c c thermal characteristics thermal resistance, junction to case thermal resistance, junction to ambient maximum lead temperature for soldering purposes: ve" from case for 5 seconds rftjc r9ja tl 1.67 80 260 1.67 80 260 c/w c/w c (1) repetitive rating: pulse width limited by max. junction temperature. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verify that datasheets are current before placine orders. quality semi-conductors
electrical characteristics (t"c= 25 c) (unless otherwise specified) characteristic symbol min typ max unit off characteristics drain-source breakdown voltage irf630/D84DN2 (vgs = 0v, id = 250 //a) irf631/d84dm2 zero gate voltage drain current (vds = max rating, vqs = 0v, tc = 25 c) (vds = max rating, x 0.8, vgs = 0v, tc = 125c) gate-source leakage current (vgs = 20v) bvdss idss igss 200 150 ? ? ? ? ? ? 250 1000 500 volts a/a na on characteristics' gate threshold voltage tc = 25c (vds = vgs. id = 250 ma) on-state drain current (vqs = 10v, vds = 10v) static drain-source on-state resistance (vgs = iov, id = s.oa) forward transconductance (vds = 10v, id = 5.0a) vgs(th) id (on) rds(on) qfs 2.0 9.0 ? 2.4 ? ? 0.34 3.0 4.0 ? 0.4 ? volts a ohms mhos dynamic characteristics input capacitance output capacitance reverse transfer capacitance vqs = 0v vds = 25v f = 1 mhz cjss coss crss ? ? ? 650 150 30 800 450 150 pf pf pf switching characteristics' turn-on delay time rise time turn-off delay time fall time vds = 90v id = 5.0a, vqs = 15v rgen = son, rgs = i2.sn (rgs(equiv.)=10n) tyon) tr 4d(off) tf ? ? ? ? 15 25 30 20 ? ? ? ? ns ns ns ns source-drain diode ratings and characteristics* continuous source current pulsed source current diode forward voltage (tc = 25c, vgs = ov, is = 9.0a) reverse recovery time (ls = 9.0a, dls/dt = 100a///sec, tc = 125c) is ism vsd trr qrr ? ? ? ? ? ? 1.0 300 2.5 9.0 36.0 2.0 a a volts ns pc "pulse test: pulse width < 300 /js. duty cycle < 2% 60 40 amperes 1 ooo c 5 4 1 2 u ! ,,o | 0.8 .06 0.4 0.2 0 ! \ s \d x" ?^ \ s j ^operation may be lim si ~ s s v x ,^7*^ %n v x x. "x^ ^v xx in this area ^ ngle pulse v2s-c x^ . u s^ v s s. s s \. s s, s . ^ ^ ^ x ^ s^v x irf630/D84DN2 : irf631/d84dm2-^- | v x^ v s ?t 10^s ,? turns 100ms 10 20 40 6080100 200 400600 1000 vdt, drain-source voltage ivolts) maximum safe operating area 24 22 2.0 g 1'8 jej j 1.6 i 1.4 0.8 0.6 i conditions: rds(on) conditions iq = 5.0 a, vqc, = 10v vgs(th) conditions: id = 2kva, vd"s = vqs 0 40 80 tj. junction temperature i"c> typical normalized rdsion, and vqsithi vs. temp.
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